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| Si4810BDY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 10 8 rDS(on) (W) 0.0135 @ VGS = 10 V 0.020 @ VGS = 4.5 V D TrenchFETr Power MOSFETS D Fast Switching Speed D Low Gate Charge APPLICATIONS D DC-DC Logic Level D Low Voltage and Battery Powered Applications SCHOTTKY PRODUCT SUMMARY VDS (V) 30 Diode Forward Voltage VSD (V) 0.53 V @ 3.0 A IF (A) 3.8 D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D N-Channel MOSFET S Ordering Information: Si4810BDY SI4810BDY-T1 (with Tape and Reel) G Schottky Diode ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IF IFM 10 sec 30 30 "20 10 8 50 2.3 3.8 40 2.5 1.6 2.0 1.3 Steady State Unit V 7.5 6 A 1.25 2.4 1.38 0.88 1.31 0.84 - 55 to 150 _C W THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambient (t v 10 sec)a Junction-to-Ambient Device MOSFET Schottky MOSFET Symbol Typical 36 44 Maximum 50 60 90 95 21 30 Unit RthJA 73 77 17 Maximum Junction-to-Ambient (t = steady state)a Mi J ti t A bi t t d tt) Schottky MOSFET RthJF _C/W Maximum Junction-to-Foot (t = steady state)a Mi J ti t F t t d tt) Notes a. Surface Mounted on FR4 Board. Schottky 24 For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72229 S-31063--Rev. A, 26-May-03 www.vishay.com 1 Si4810BDY Vishay Siliconix New Product MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage VGS(th) IGSS VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current (MOSFET + Schottky) On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Schottky Diode Forward Voltagea IDSS VDS = 24 V, VGS = 0 V, TJ = 100_C VDS = 24 V, VGS = 0 V, TJ = 125_C ID(on) rDS(on) gfs VSD VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 5 A VDS = 15 V, ID = 10 A IS = 3.0 A, VGS = 0 V IS = 3.0 A, VGS = 0 V, TJ = 125_C 20 0.0105 0.016 25 0.485 0.420 0.53 0.47 V 0.0135 0.020 W S 0.007 1.5 6.5 1 3 "100 0.100 10 20 A mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistnce Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 3.0 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W VDS = 15 V, VGS = 5 V, ID = 10 A 14.5 6.3 4.7 0.55 17 13 45 15 36 30 20 90 25 70 ns W 22 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72229 S-31063--Rev. A, 26-May-03 Si4810BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 50 Vishay Siliconix Transfer Characteristics 30 4V 20 30 20 TC = 125_C 10 25_C 10 3V 0 0 1 2 3 4 5 - 55_C 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 2500 Capacitance Ciss (MOSFET) C - Capacitance (pF) 0.032 2000 0.024 VGS = 4.5 V 0.016 VGS = 10 V 1500 1000 Coss (MOSFET + Schottky) 0.008 500 Crss (MOSFET) 0.000 0 10 20 30 40 50 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) r DS(on) - On-Resistance ( W) (Normalized) VDS = 15 V ID = 10 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 10 A 1.4 5 4 1.2 3 1.0 2 1 0.8 0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC) 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 72229 S-31063--Rev. A, 26-May-03 www.vishay.com 3 Si4810BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 50 0.06 On-Resistance vs. Gate-to-Source Voltage 10 TJ = 150_C TJ = 25_C r DS(on) - On-Resistance ( W ) 0.05 I S - Source Current (A) 0.04 ID = 9.0 A 0.03 1 0.02 0.01 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Reverse Current (Schottky) 30 10 40 I R - Reverse Curent (mA) 1 Power (W) 30 V 0.1 10 V 0.01 20 V 0.001 30 50 Single Pulse Power 20 10 0.0001 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Safe Operating Area, Junction-to-Case 100 Limited by rDS(on) 10 I D - Drain Current (A) 1 ms 1 10 ms 100 ms TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 0.1 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72229 S-31063--Rev. A, 26-May-03 Si4810BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W t1 t2 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72229 S-31063--Rev. A, 26-May-03 www.vishay.com 5 |
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